Research of temperature and concentration dependences of bismuth transport coefficients on the McClure dispersion law model basis for L-band charge carriers

摘要

Experimental data on the Seebeck coefficient and electrical resistivity for bismuth crystals was summarized and supplied in this research. General laws of transport processes based on the McClure charge carrier dispersion law are considered. The relaxation time of charge carriers is approximated by a power function of the temperature and energy. Three actual bands are taken for calculation of the transport coefficient in these materials. Electrical resistivity and the Seebeck coefficient were found by numerical solution of the transport equation. Various parameters of the relaxation law are selected by the least square method for minimization of the difference between experimental and calculated results.