Multi-band simulation of interband tunneling devices reflecting realistic band structure

摘要

We have studied quantum transport in a Si interband tunneling diode (ITD) based upon a tight-binding nonequilibrium Green's function method. In the simulation, an empirical tight-binding theory has been used to take into account realistic band structures. Comparison has been made between the results of our multiband (MB) model and those of conventional two-band (2B) model. It is found that the current-voltage (I-V) characteristics of the Si ITD have considerably smaller peak current density than the 2B model, since our MB model reflects the nature of indirect gap structure.