Investigation of interface formation and charge properties of MIS structures Al-Dy/sub x/O/sub y/-n-InP(100)

摘要

Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are discussed. InP MIS structures with low effective charge density N/sub ss//spl sim/10/sup 11/ cm/sup -2/, interface trap density N/sub it//spl sim/3/spl middot/10/sup 11/ cm/sup -2/ eV/sup -1/ and capacitance-voltage characteristic hysteresis less than 0.3 V have been obtained. It is shown that DyP/sub x/O/sub y/ transition layer formation plays a predominant role in obtaining MIS structures with a very good compatible gate dielectric material for InP MISFET's.