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Thermal and Electrical Performance Enhancement with a Cost-Effective Packaging for High Speed Memory Chips

机译:通过具有成本效益的高速存储芯片封装来提高热和电性能

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By properly incorporating wafer level package (WLP) and chip embedded processes, a type II chip-in-substrate package (CiSP) without ultra-thin chips is developed for high speed memory devices in this paper. According to the design concept of the type II CiSP, a hybrid process using build-up technologies in wafer level and COG-based (chip-on-glass) transfer bonding is explored to implement the JEDEC-compliant DDR II component. It can be seen that the cost advantages of PCB-like CiSP and the electrical performance of WLP can be achieved simultaneously by adopting this proposed solution. A test vehicle of DDRII-667 memory chips provided by ProMos Technologies Inc. will be studied here to demonstrate the feasibility of this developed packaging. Compared with the type I CiSP and the current w-BGA package, the performance is thermally and electrically enhanced.
机译:通过适当地结合晶圆级封装(WLP)和芯片嵌入工艺,本文为高速存储设备开发了不带超薄芯片的II型衬底内芯片封装(CiSP)。根据II型CiSP的设计概念,探索了一种在晶圆级和基于COG(玻璃上芯片)的转移键合中使用堆积技术的混合工艺,以实现符合JEDEC的DDR II组件。可以看出,采用该提议的解决方案可以同时实现类似PCB的CiSP的成本优势和WLP的电气性能。 ProMos Technologies Inc.提供的DDRII-667存储芯片的测试工具将在这里进行研究,以证明这种开发的封装的可行性。与I型CiSP和当前的w-BGA封装相比,该性能在热和电方面得到了增强。

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