Integrated Compact Modelling of a Planar-Gate Non-Punch-Through 3.3kV-1200A IGBT Module for Insightful Analysis and Realistic Interpretation of the Failure Mechanisms

摘要

This paper proposes the comprehensive electro-thermal model development of a multi-chip IGBT power assembly. Intended particularly for reliability investigations, it is based on a mixed physical and behavioral description approach and includes all basic and secondary electro-thermal effects, enabling accurate and insightful simulations. Examples taken from a traction inverter application scenario demonstrate the validity and the usefulness of the proposed solution.