We have developed a 16Mb toggle MRAM. It has some 100-MHz burst modes that are compatible with a pseudo SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, an interleaved and pipelined memory-array group activation scheme and a noise insulation switch scheme have been proposed. The MRAM was fabricated with a 0.13-驴m CMOS and 0.24-驴m MRAM process with five metal layers.
展开▼
