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Effect of Structures of NiFe-Based Free Layers on Writing Properties in Toggle MRAMs

机译:基于NiFe的自由层结构对Toggle MRAM写入性能的影响

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摘要

The toggle writing of NiFe-based free layers grown on amorphous-AlO and MgO(001) barriers was investigated. The polycrystalline orientation was shown to explain behaviors of the saturation and spin-flop fields and their thermal endurances. To obtain small variations of these with high thermal robustness, a fully promoted NiFe(111)/Ru(001) orientation was important
机译:研究了在非晶AlO和MgO(001)势垒上生长的NiFe基自由层的翻转写入。显示了多晶取向来解释饱和和自旋场的行为及其热耐受性。为了获得具有高热稳定性的微小变化,充分促进NiFe(111)/ Ru(001)取向非常重要

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