A High Compliance Input and Output Regulated Body-Driven Current Mirror for Deep-Submicron CMOS

摘要

A current mirror circuit that uses body-driven MOSFETs to achieve an ultra-low input and output voltage is presented. High-gain amplifiers, suitable for a deep submicron process, are used to provide matching as well as input and output regulation. Simulation results were verified with measurements performed on a fabricated chip using the 90-nm CMOS process from ST-Microelectronics.