首页> 外国专利> Sense amplifier for flash memory array, has offset current source that increases input current to offset current at read-input node and decreases mirrored input current to offset current at result output node

Sense amplifier for flash memory array, has offset current source that increases input current to offset current at read-input node and decreases mirrored input current to offset current at result output node

机译:用于闪存阵列的读出放大器,具有偏置电流源,该偏置电流源将输入电流增加到读输入节点处的偏置电流,并将镜像输入电流减小到结果输出节点处的偏置电流

摘要

The sense amplifier (100) has a read-input node (122) which receives input current, and a current mirror circuit (120) which is coupled to the read input node to generate mirrored input current. A result output node (106) is coupled with current mirror circuit and reference side switching circuit (104). An offset current source (134) is connected to the read-input node and result output node, for increasing the input current to an offset current at the read-input node and decreasing the mirrored input current to the offset current at the result output node. An independent claim is included for flash memory array.
机译:读出放大器(100)具有接收输入电流的读输入节点(122)和耦合到读输入节点以产生镜像输入电流的电流镜电路(120)。结果输出节点(106)与电流镜电路和参考侧开关电路(104)耦合。偏移电流源(134)连接到读取输入节点和结果输出节点,用于将输入电流增加到读取输入节点处的偏移电流,并将镜像的输入电流减小到结果输出节点处的偏移电流。 。闪存阵列包含独立索赔。

著录项

  • 公开/公告号DE102012220709A1

    专利类型

  • 公开/公告日2013-06-13

    原文格式PDF

  • 申请/专利权人 ATMEL CORPORATION;

    申请/专利号DE201210220709

  • 发明设计人 CASTILLON ERWIN;MUDUMBA UDAY;

    申请日2012-11-14

  • 分类号G11C7/06;

  • 国家 DE

  • 入库时间 2022-08-21 16:21:39

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