A novel solution for porous low-k dual damascene post etch stripping/clean with supercritical CO/sub 2/ technology for 65nm and beyond applications

摘要

Supercritical C0/sub 2/ technology for single and dual damascene post etch stripping and clean was successfully demonstrated on 65nm technology node. Both bulk film composition analysis and electrical performance on 300mm have been investigated in the present work. With superior compatibility for porous low-k materials, complete removal of photo resist and residue with better leakage and RC delay performance was achieved for the first time.