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A bulk micromachined distributed digital phase shifter for microwave phased array applications

机译:适用于微波相控阵应用的批量微机械分布式数字移相器

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A novel distributed digital MEMS (micro-electro-mechanical system) microwave phase shifter, fabricated with bulk Si micromachining techniques, is presented. Using a distributed nonlinear transmission line technique, with single crystal silicon based multilayer microbridge structures as loading varactors, this phase shifter delivers true time delay and wideband performance. A micromachining process flow, combining anodic bonding and single crystal silicon etching with heavy boron doping, was developed to fabricate the movable Si-based microbridges over a coplanar waveguide (CPW). An electrostatic voltage, applied between the Si layer of the microbridges (varactors) and CPW ground plane, pulls down the microbridges, effecting a phase shift varying linearly with. frequency. The principle, process and RF performance characterization are described. The actuated phase shifter has achieved 90.2/spl deg/ phase shift at 20.5 GHz, with good reflection loss (-12 dB) in the frequency range of 5-20.5 GHz. The insertion loss is a little high, 3.87 dB, however, due to the lossy substrate of Pyrex 7740 glass and the thin metalization of the CPW.
机译:提出了一种采用体硅微加工技术制造的新型分布式数字MEMS(微机电系统)微波移相器。使用分布式非线性传输线技术,以基于单晶硅的多层微桥结构作为负载变容二极管,该移相器提供了真正的时延和宽带性能。开发了一种将阳极键合和单晶硅蚀刻与重硼掺杂相结合的微加工工艺流程,以在共面波导(CPW)上制造可移动的基于Si的微桥。施加在微桥(变容二极管)的Si层和CPW接地平面之间的静电电压会拉低微桥,从而使相移线性变化。频率。描述了原理,过程和RF性能表征。致动移相器在20.5 GHz时已实现90.2 / spl deg /相移,在5-20.5 GHz的频率范围内具有良好的反射损耗(-12 dB)。然而,由于Pyrex 7740玻璃的损耗性基底和CPW的薄金属化,插入损耗略高,为3.87 dB。

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