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Low return loss DC to 60 GHz SMT package with performance verification by precision 50 Ohm load

机译:DC至60 GHz SMT封装的低回波损耗,并通过50欧姆精密负载进行了性能验证

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This paper describes the design process and measurement results for a precision microstrip 50 ohm load used to qualify SMT packages with low reflection transitions up to 60 GHz. Using a low return loss 50 ohm microstrip load and a network analyzer with a time gating function allows fast and unambiguous characterization of individual package transitions. The 50 ohm load is coupled with an optimally designed wire bond connection between the microstrip circuit and the topside signal trace on the SMT package. Verification of this characterization technique is demonstrated by measurements made on a PCB /spl rarr/ package trace /spl rarr/ wire bond /spl rarr/ 50 ohm load transition, showing better than -20dB return loss DC to 50 GHz, and better than -15dB return loss DC to 60 GHz.
机译:本文介绍了一种精密的50欧姆微带线负载的设计过程和测量结果,该负载用于验证具有高达60 GHz的低反射跃迁的SMT封装。使用低回波损耗50 ohm微带负载和具有时间选通功能的网络分析仪,可以快速,明确地表征各个封装的转换。 50欧姆负载与微带电路和SMT封装上的顶部信号走线之间的优化设计的引线键合连接在一起。通过在PCB / spl rarr /封装走线/ spl rarr /引线键合/ spl rarr / 50欧姆负载过渡上进行的测量,可以证明对这种表征技术的验证,在50 GHz时直流回波损耗优于-20dB,并且优于- 15dB回波损耗DC至60 GHz。

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