A precision SOI-CMOS front-end amplifier for smart microsensors applicable to severe operation environment with large temperature variation

摘要

In this paper, a precision SOI-CMOS analog front-end amplifier for smart microsecond interface applicable to severe environment is presented. Although SOI-CMOS circuits can operate over 150/spl deg/C, temperature drift of offset voltage is a serious problem to be solved for precise signal detection. Thus, a novel autozero circuit configuration is applied to stabilize offset voltage of the amplifier precisely at high temperatures where leakage current of switches is not negligible. Offset drift of fabricated SOI-CMOS amplifier was well suppressed below 1mV from RT to 200/spl deg/C without any trimming. This amplifier has essentially high robustness and stability for dramatic temperature change under severe environment.