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A low-cost-packaged 4.9-6 GHz LNA for WLAN applications

机译:适用于WLAN应用的低成本封装4.9-6 GHz LNA

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A two stage fully integrated low-noise amplifier has been developed for 4.9-6 GHz WLAN applications. This circuit was realized in a 0.35 /spl mu/m SiGe BiCMOS process and packaged in a low cost plastic VFQFPN package. The circuit operates over a wide band (4.9-6 GHz) and draws 13.2 mA from 2.0 V supply. It exhibits a noise figure of 3.9 dB and a gain of 18.7 dB at 5.5 GHz. The measured IIP1 and IIP3 are respectively -13.9 dBm and -3.5 dBm at 5.5 GHz. The input and output return losses are lower than -10 dB and the gain ripple is less than 1.5 dB over all the frequency bandwidth.
机译:已经开发出一种用于4.9-6 GHz WLAN应用的两级全集成式低噪声放大器。该电路以0.35 / spl mu / m的SiGe BiCMOS工艺实现,并采用低成本塑料VFQFPN封装。该电路在宽带(4.9-6 GHz)上工作,并从2.0 V电源汲取13.2 mA电流。它在5.5 GHz时的噪声系数为3.9 dB,增益为18.7 dB。在5.5 GHz时,测得的IIP1和IIP3分别为-13.9 dBm和-3.5 dBm。在所有频率带宽上,输入和输出回波损耗小于-10 dB,增益纹波小于1.5 dB。

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