Polymer light emitting diode made of poly(4,4'-diphenylene diphenylvinylene) and poly(9-vinylcarbazole) thin films

摘要

The polymer light emitting device with ITO/PVK/PDPV/Al structure was fabricated. Poly(9-vinylcarbazole), PVK, thin films were used as hole transport layer and poly (4,4'-diphenylene diphenylvinylene), PDPV, as a luminescent layer, respectively. Indium Tin Oxide (ITO) and Aluminum (Al) thin films were used as positive and negative electrode, respectively. It was found that the device required the turn-on voltage of 8.0 V to obtain a current density of 0.1 mA/cm/sup 2/. The maximum brightness obtained was in excess of 900 cd/m/sup 2/. The lifetime of the device has been achieved exceeding 5.0 hours operating at 11.0 V.