An InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)

摘要

The device characteristics of a novel InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor (PHEMT) are reported. The double InGaAs layers are used to increase the total channel thickness. Experimentally, a flat and wide transconductance and microwave operation regimes over 300 mA/mm are obtained. In addition, the compression of transconductance and frequency response are insignificant even operated at high forward gate-source voltage of +2.0 V. Therefore, the studied device provides the promise for microwave circuit applications.