From the physics to the Spice equivalent circuits. Application to a microwave GaAs-HBT

摘要

In this paper, the parameters of the different equivalent circuits (DC, AC and transient) of the Spice bipolar transistor model are obtained for a real GaAs HBT by making use of a compact model of the semiconductor device. The input of the device model are the physical properties of the semiconductor materials and the geometry of the device.