An estimation method of the channel temperature of power MOS devices

机译：功率MOS器件沟道温度的估算方法。

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

A method is presented to characterize the IGBT (insulated gate bipolar transistor) from a power module to obtain an internal temperature estimation. A prototype is described. The technique is compatible with operating PWM-based converters.

机译：提出了一种方法来表征功率模块中的IGBT（绝缘栅双极型晶体管）以获得内部温度估算值。描述了一个原型。该技术与运行中的基于PWM的转换器兼容。

著录项

来源
《》|2000年|P.1594-1599|共6页
会议地点
作者
Bergogne; D.; Allard; B.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术 ;
关键词

相似文献

外文文献
中文文献
专利

1. Impact of the sensing current density on PN-junction based temperature estimation methods for Si and SiC power devices [J] . Hoffmann Felix, Rugen Sarah, Silber Dieter, Microelectronics & Reliability . 2020 ,第Nova期

机译：感测电流密度对Si和SiC功率器件PN结基温度估计方法的影响
2. AN ESTIMATION METHOD OF FLASH TEMPERATURE AT HEAD/MEDIA INTERFACE IN MAGNETIC RECORDING DEVICES (1ST REPORT) - INTRODUCTION OF SURFACE TEMPERATURE ESTIMATION FORMULA- [J] . TAKASHI YOSHIZAWA 精密工学会誌 . 1999 ,第6期

机译：磁记录设备磁头/介质界面处闪烁温度的一种估算方法（第一份报告）-表面温度估算公式的介绍
3. New method for determination of drain saturation voltage in short channel MOS devices between liquid helium to room temperature [J] . Y. Amhouche, A. El Abbassi, K. Rais Active and Passive Electronic Components . 2001 ,第2期

机译：测定液氦至室温之间短沟道MOS器件漏极饱和电压的新方法
4. An estimation method of the channel temperature of power MOS devices [C] . Bergogne D., Allard B., Institute of Electric and Electronic Engineer IEEE Annual Power Electronics Specialists Conference . 2000

机译：功率MOS装置的频道温度的估计方法
5. Power-saving method for DRAM/eDRAM and 3D-DRAM exploiting the process variations, temperature changes, device degradation, and memory access workload variations and innovative heterogeneous memory management approach using 3D-DRAM with Quality of Service. [D] . Tran, Le-Nguyen. 2013

机译：DRAM / eDRAM和3D-DRAM的省电方法，利用工艺变化，温度变化，设备降级和内存访问工作负载变化，以及使用具有服务质量的3D-DRAM的创新的异构存储管理方法。
6. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [O] . Huolin Huang, Feiyu Li, Zhonghao Sun, 2018

机译：宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
7. Novel Monitoring Method and Failure-age Estimation of Power Semiconductor Devices in Power Utilities [O] . Toshikazu Horiuchi, Yoshitaka Sugawara 2003

机译：电力公用事业电力半导体器件的新型监测方法和故障年龄估计
8. SiC Discrete Power Devices-Analysis and Optimization of the Planar 6H-SiCACCUFET; A Planar Lateral Channel SiC Vertical High Power JFET; The Planar Lateral Channel MESFET-A New SiC Vertical Power Device; Growth via Hot Wall Chemical Vapor Deposition Chara [R] . Davis, R. F., Baliga, B. J., Tomozawa, H. S., 1998

机译：siC离散功率器件 - 平面6H-siCaCCUFET的分析和优化;平面横向沟道siC垂直高功率JFET;平面横向通道mEsFET-a新型siC垂直功率器件;通过热壁化学气相沉积Chara生长

An estimation method of the channel temperature of power MOS devices

摘要

著录项

相似文献

相关主题

期刊订阅