A 2 GHz cycle, 430 ps access time 34 Kb L1 directory SRAM in 1.5 V, 0.18 /spl mu/m CMOS bulk technology

摘要

This paper describes a high speed L1 directory (34 Kb) with read access time below 430 ps and a cycle of 2 GHz in 1.5 V, 0.18 /spl mu/m CMOS bulk technology. The key features of this high performance dynamic design are fast static input/output interface with the provision of converting internal signals from static to dynamic and then back to static at the output, L1/L2 latches at the input, modular building blocks, pseudo-static circuits, robust timing plan and capability for extensive test pattern coverage and access time evaluation using a programmable "Array-Built-In-Self-Test" (ABIST).