Saturation charge storage measurements in GaInP/GaAs/GaAs and GaInP/GaAs/GaInP HBTs

摘要

Saturation charge storage effects can degrade bipolar transistor performance for both analog and digital applications in which the base-collector junction can become forward-biased. In this work, we have measured the saturation charge storage time of GaInP/GaAs HBTs with GaAs and GaInP collectors, and have shown that there is a significant reduction in the charge storage for the GaInP case (DHBTs). Krakauer's method was used to measure the charge storage time. This work illustrates that DHBTs are promising devices for circuits in which transistor saturation occurs. For these applications, the devices also benefit from low offset voltage and high breakdown voltage associated with the GaInP collector.