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A new dose controller for the genus 1510/1520/Kestrel MeV ion implanters

机译:适用于1510/1520 / Kestrel MeV离子注入机的新型剂量控制器

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A new Dose Controller has been developed for the Genus 1510/1520/Kestrel family of MeV Ion Implanters. The new Controller offers selectable scan times, permitting the end user to control the separation between adjacent beam passages across the wafer. Before every implant the total offset of the electronics, cabling and Faraday Cup is measured precisely. This value is then subtracted from the signal observed during the implant. Including the Faraday Cup in this measurement permits cancellation of any leakage currents that may be flowing in the Faraday circuit. The beam current is integrated only over the time that the disk slot is actually passing through the beam. Reducing the integration period further reduces the system's sensitivity to small offsets, and provides a consistent, minimum delay between the slot's passage and the availability of a new scan velocity.
机译:已经为MeV离子植入机的Genus 1510/1520 / Kestrel系列开发了新的剂量控制器。新的控制器提供了可选的扫描时间,使最终用户可以控制晶片上相邻光束之间的间隔。在每次植入之前,都要精确测量电子设备,电缆和法拉第杯的总偏移量。然后从植入期间观察到的信号中减去该值。在此测量中包括法拉第杯,可以消除法拉第电路中可能流动的任何泄漏电流。电子束电流仅在磁盘插槽实际通过电子束的时间内积分。减少积分周期进一步降低了系统对小偏移的敏感性,并在插槽的通过与新扫描速度的可用性之间提供了一致的最小延迟。

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