Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1 /spl mu/m HEMT technologies

摘要

Design and development of ultra low noise MMIC Q-band LNAs using both InP- and GaAs-based 0.1 /spl mu/m HEMT technologies with state-of-the-art noise figures are reported in this paper. For InAlAs-InGaAs-InP HEMT LNAs, we have achieved noise figure performance as low as 1.6 dB with 10 dB associated gain for a one-stage LNA. With a two stage design, 20 dB gain with 1.8 dB noise figure was obtained. Single- and multistage MMIC LNAs were also designed and fabricated using a production 0.1 /spl mu/m AlGaAs-InGaAs-GaAs HEMT process. A four-stage LNA also demonstrated 2.5 dB noise figure with 28 dB gain, which is the best MMIC LNA result ever reported for on GaAs-based HEMTs.