This paper shows the results of a study of electrical resistivity and thermopower of semiconductor iron disilicide /spl beta/-FeSi/sub 2/ doped with Ru, Rh and Pd in the temperature range 300-1000 K. Polycrystalline samples for measurement were prepared by the vacuum-casting method. The limits of each dopant solubility in iron disilicide were estimated by X-ray diffraction measurements. It is shown that if non-band conductivity mechanism takes place in pure iron disilicide, the addition of the heavy metals results in change of conductivity mechanism. The results obtained are discussed from the point of optical phonon drag effect.
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