Deep traps and brightness degradation for oxygen-rich concentration in ZnS:TbOF thin film electroluminescent devices

摘要

The purpose of this work is to study the relationship between the oxygen-rich concentration and brightness degradation in ZnS:TbOF green A.C. thin-film electroluminescent devices. The results showed that higher oxygen-content (O/Tb<1) in the phosphor layer not only created the deep hole traps (E/sub t1/ and/or E/sub t2/) but also yielded the EL devices with moisture. As a result, lower brightness was obtained.