A 1860 kG CMOS gate array with GTL input flip-flop circuits

摘要

A 1860 kG CMOS gate array with a high speed I/O circuit using 0.35 /spl mu/m CMOS process technology, has been developed. 300 MHz synchronous data transmission through a 30 cm line has been achieved with a flip-flop circuit which can directly receive and store a low voltage swing signal. This circuit technique reduces the latency time of data transmission between 2 LSIs by as much as 1.7 ns compared with conventional circuits.