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Increasing B/sup +/ current from a microwave ion source by simultaneously utilizing new techniques

机译:同时利用新技术增加来自微波离子源的B / sup + /电流

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In previous papers we reported two separate methods for enhancing B/sup +/ ion current. One was to optimize the discharge-chamber volume by comparing it with the computer-simulated magnetic field. Resultantly the modified chamber that has larger volume than the standard chamber provided B/sup +/ ion current over 13 mA. The other was to enhance the secondary electron emissivity of the chamber wall by adding MgO into the chamber material. The experiment on the standard chamber showed the 5% addition of MgO resulted in 60% increase of the B/sup +/ ion current. In this study we have utilized these two methods simultaneously, that is, we have tested the modified chamber that is made of boron nitride with MgO mixed. As a result we have obtained B/sup +/ ion current of 15 mA on an old beam line having moderate transmission.
机译:在先前的论文中,我们报告了两种用于增强B / SUP + /离子电流的单独方法。通过将其与计算机模拟的磁场进行比较来优化排出室体积。结果,改进的腔室具有比标准室更大的体积大于13 mA的B / SUP + /离子电流。另一个是通过将MgO加入腔室材料来增强腔室壁的二次电子发射率。标准室的实验表明,B / SUP + /离子电流增加了60%。在该研究中,我们同时使用了这两种方法,即我们已经测试了由MgO混合的氮化硼制成的改性室。结果,我们在具有适度传输的旧光束线上获得了15 mA的B / SUP + /离子电流。

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