首页> 外文会议> >A 5-GHz monolithic silicon bipolar down-converter with a 3.2-dB noise figure
【24h】

A 5-GHz monolithic silicon bipolar down-converter with a 3.2-dB noise figure

机译:具有3.2dB噪声系数的5GHz单片硅双极下变频器

获取原文

摘要

A monolithic 5-GHz down-converter consisting of a low noise amplifier (LNA) and a double-balanced mixer was designed using a 46-GHz-f/sub T/ silicon bipolar process. The down-converter exhibits a SSB noise figure as low as 3.2 dB, a 24-dB power gain, and an input compression point of -23 dBm. It was assembled in a 4 /spl times/ 4 mm = low-cost QFN 16-lead plastic package and draws only 18 mA from a 3-V power supply.
机译:使用46GHz-f / sub T /硅双极工艺设计了由低噪声放大器(LNA)和双平衡混频器组成的单片5 GHz下变频器。下变频器的SSB噪声系数低至3.2 dB,功率增益为24 dB,输入压缩点为-23 dBm。它采用低成本的4引脚QFN 16引线塑料封装以4 / spl次/ 4 mm的价格进行组装,并且从3-V电源中仅消耗18 mA的电流。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号