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A novel logarithmic response CMOS image sensor with high output voltage swing and in-pixel fixed pattern noise reduction

机译:具有高输出电压摆幅和像素内固定图案降噪的新型对数响应CMOS图像传感器

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A novel logarithmic response 0.25 /spl mu/m CMOS image sensor technology for high output swing and low noise error is proposed. The experimental results show that the new cell has 4 times higher output voltage swing. Optimized simulation results show 6.5 times larger output voltage swing, which is achievable for an input signal range of 0.01 lux to 100,000 lux. With this wider swing, the effect of fixed pattern noise (FPN) reflecting on the digital output can be reduced significantly. In addition, after adding a correlated double sampling (CDS) control transistor, the output voltage difference variation due to FPN is greatly reduced from 73 mV to 15 mV.
机译:提出了一种新颖的对数响应0.25 / spl mu / m CMOS图像传感器技术,可实现高输出摆幅和低噪声误差。实验结果表明,新电池的输出电压摆幅高出4倍。优化的仿真结果显示输出电压摆幅大6.5倍,这对于0.01 lux至100,000 lux的输入信号范围而言是可以实现的。通过这种较大的摆幅,可以显着减少固定模式噪声(FPN)反映在数字输出上的影响。此外,在添加相关双采样(CDS)控制晶体管后,由于FPN引起的输出电压差变化将从73 mV大大降低至15 mV。

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