Theoretical study of electrostatic-field-induced bending of membrane in shunt-capacitance MEMS RF switches

摘要

The paper describes the simulation of the performance of MEMS RF switches by using ANSYS as a primary tool. It starts with mechanic field, then electrostatic field, and then couples the effect of the two fields. The Young's modulus is one of the major factors of the pull-down voltage, it analyzes the Au, compose of different ratio Al-Si, and the simulation is very significantly guiding experiments.