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Ultrafast photoconductive switch with a 43 nm insulator gap fabricated by an atomic force microscope

机译：原子力显微镜制造的绝缘体间隙为43 nm的超快光电导开关

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《》|2001年|P.134-135|共2页
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Itatani; T.; Nakagawa; T.;
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中图分类无线电电子学、电信技术 ;
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3. Cross-Sectional Transmission Electron Microscopy Analysis of Nanogap Electrode Fabricated by Atomic Force Microscope Local Oxidation [J] . Rai Moriya, Eriko Ikenaga, Satoru Masubuchi, Japanese journal of applied physics . 2013 ,第5Issue1期

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4. Ultrafast photoconductive switch with a 43 nm insulator gap fabricated by an atomic force microscope [C] . Itatani T., Nakagawa T., Institute of Electric and Electronic Engineer Summaries of Papers Presented at the Conference on Lasers and Electro-Optics . 2001

机译：超快光电导电开关，由原子力显微镜制造的43 nm绝缘体间隙
5. Magnetic field enhancement of Coulomb blockade conductance oscillations in metal-metal oxide double barrier tunnel devices fabricated using atomic force microscope nanolithography. [D] . Wiemeri, Jeffrey Charles. 2005

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8. Vertical Alignment of Single-Walled Carbon Nanotubes on Nanostructure Fabricated by Atomic Force Microscope [R] . Lee, H. 2009

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Ultrafast photoconductive switch with a 43 nm insulator gap fabricated by an atomic force microscope

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