Preparation of high purity water with low concentration of dissolved oxygen (DO) and total organic carbon (TOC) for VLSI process

摘要

To meet the needs of the rapid development of VLSI for high purity water, high quality equipment for high purity water with the capacity of 10t/h has been designed and built. The equipment contains triply connected membrane contactors working at 22/spl deg/C under a pressure of 0.01 Mpa with N/sub 2/ flow rate of 2.3 m/sup 3//h, a double RO and an 185 nm UV lamp. After the treatment by using the equipment the DO concentration can be decreased from 3000 /spl mu/g/L down to 0.6 /spl mu/g/L and the TOC concentration from 9000 /spl mu/g/L down to 0.7 /spl mu/g/L which satisfies the requirement of VLSI fabrication.