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Generation of intense pulsed ion beams by Br magnetically insulated ion diodes

机译:Br磁绝缘离子二极管产生强脉冲离子束

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Summary form only given, as follows. Intense pulsed heavy ion beams (HIB) of nitrogen, carbon, aluminum, etc. are expected to be applied to materials processing such as surface heat treatment, ion implantation etc. To apply the pulsed power ion diode to those applications we are developing two types of Br type magnetically insulated ion diode, i.e. a high impedance diode and a low impedance diode. In the high impedance diode a coaxial plasma gun was used as an ion source. The diode was driven by a high impedance pulsed power system (output parameter; 200 kV, 2 kA, 200 ns) where a pulse-forming network and step up transformer are used. On the other hand, in the low impedance diode a flashboard anode is used and the anode plasma is produced by the irradiation of electrons. The diode was drive by a Blumlein pulse forming line (output parameter; 600 kV, 24 kA, 60 ns). The ion current density, ion species, energy, and brightness were evaluated for both type of ion diode. A Thomson parabola spectrometer, filtered ion pinhole camera and biased ion corrector are used in the experiment.
机译:仅给出摘要表格,如下。预期将氮,碳,铝等强脉冲重离子束(HIB)应用于材料加工,例如表面热处理,离子注入等。为了将脉冲功率离子二极管应用于这些应用,我们正在开发两种类型Br型磁绝缘离子二极管,即高阻抗二极管和低阻抗二极管。在高阻抗二极管中,同轴等离子枪用作离子源。二极管由高阻抗脉冲功率系统(输出参数; 200 kV,2 kA,200 ns)驱动,其中使用了脉冲形成网络和升压变压器。另一方面,在低阻抗二极管中,使用了插板式阳极,并且通过电子辐照产生阳极等离子体。二极管由Blumlein脉冲形成线驱动(输出参数; 600 kV,24 kA,60 ns)。对两种类型的离子二极管都评估了离子电流密度,离子种类,能量和亮度。实验中使用了Thomson抛物线光谱仪,过滤离子针孔照相机和偏置离子校正器。

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