Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

摘要

Microstructure evolution in MOVPE-grown GaN with different low-temperature-buffer annealing time was investigated. Low-temperature-buffer annealing process was found to effectively modulate the in-plane and out-of-plane misorientation of mosaic blocks, and simultaneously diminish the in-plane crystallite size.