A novel approach to evaluate the carrier effective mass in GeSi quantum dot structure

摘要

Carrier effective mass in the self-assembled GeSi quantum dots (QDs) grown by a solid-source molecular beam epitaxy (MBH) system has been studied with temperature-dependent photoluminescence (PL) and Raman scattering measurements. The temperature-dependence of the PL was fitted by the combination of Arrhenius and Berthelot type functions, from which a novel approach to evaluate the carrier effective mass has been proposed.