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Development of high-k embedded capacitors on printed wiring board using sol-gel and foil-transfer processes

机译:使用溶胶-凝胶和箔转移工艺在印刷线路板上开发高k嵌入式电容器

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Sol-gel ceramic films were fabricated for organic system-on-package compatible integral capacitor applications. The films were synthesized on Ti and Ni foils which were then transferred onto organic boards using a lamination step. SrTiO/sub 3/ and BaTiO/sub 3/ films were synthesized with capacitance as high as 700 nF/cm/sup 2/ and loss as low as 0.005. It should be noted that the high permeability of Ni (approximately 100 in bulk form) and lower conductivity compared to copper decreases the skin depth and increases the resistivity of copper. This can have a deleterious effect on Q. More studies are underway to investigate this effect.
机译:溶胶凝胶陶瓷膜是为有机系统级封装兼容整体电容器应用而制造的。薄膜在Ti和Ni箔上合成,然后使用层压步骤转移到有机板上。合成了SrTiO / sub 3 /和BaTiO / sub 3 /薄膜,其电容高达700 nF / cm / sup 2 /,损耗低至0.005。应当指出,与铜相比,镍的高磁导率(本体形式约为100)和较低的电导率会降低趋肤深度并增加铜的电阻率。这可能会对Q产生有害影响。正在进行更多研究来研究这种影响。

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