Direct measurement of barrier height at the HfO/sub 2//poly-Si interface: Band structure and local effects

摘要

In this study comprehensive experimental measurements together with a physical picture demonstrate that, regardless of poly-Si doping, the defects creation in the dielectric close to the poly-Si/HfO/sub 2/ interface is responsible for the observed effective WF change. These defects are amphoteric and spatially nonuniformly distributed.