The transistor: from Lillienfield to Landauer, to...? transistor scaling limits

摘要

Summary form only given. This paper describes ultrasmall transistors using the conceptual picture and simulation techniques that are being developed to explain conduction in molecules. After describing a simple picture of conduction in molecules, it applies that approach to the nanoscale MOSFET and shows that it leads to a simple, but physically insightful view of the ultrasmall MOSFET. Quantum kinetic simulations are then used to examine realistic issues for "end-of-the-roadmap" MOSFETs. Next, it addresses the question of whether any transistor (e.g. Ge, InAs, carbon nanotubes, or conjugated organic molecules) can provide a significant advantage over the silicon MOSFET. The paper concludes with a brief discussion of the fundamental limits that apply to any transistor and with some thoughts on where electronic device technology is heading.