Control of operating wavelength and linewidth in LWIR InAs/InGaAs dots-in-a-well detectors

摘要

In this paper, The detectors consist of a ten stack InAs/In/sub 0.15/Ga/sub 0.85/As DWELL active region and were grown in a solid-source MBE reactor. From an analysis of the photoluminescence spectra, we attribute this peak to a transition from a state in the dot to a state in the well. In order to increase the operating wavelength of the detector, the effect of two parameters, namely the well width and the substrate temperature during the growth of the dots (T/sub g/), were investigated.