首页> 外文会议> >A low power SOI MOSFET photodetector with a nanometer scale wire for highly integrated circuit

【24h】

A low power SOI MOSFET photodetector with a nanometer scale wire for highly integrated circuit

机译：具有纳米级导线的低功率SOI MOSFET光电探测器，用于高度集成电路

获取原文

获取外文期刊封面目录资料

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

In this paper, the optical and electric characteristics of SOI MOSFET photodetector device with a nanometer scale wire are investigated.

机译：本文研究了具有纳米尺度线的SOI MOSFET光电探测器的光学和电学特性。

著录项

来源
《》|2003年|p.296-297|共2页
会议地点
作者
Hong Goo Choi; Yeon-Shik Choi; Young Chang Jo; Hoon Kim;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电电子学、电信技术;
关键词
power MOSFET; silicon-on-insulator; photodetectors; nanowires; MESFET integrated circuits; photoconductivity; silicon; elemental semiconductors; power SOI MOSFET photodetector; nanometer scale wire; integrated circuit; optical properties; electrical prop;

机译：功率MOSFET;绝缘体上的硅;光电检测器;纳米线; MESFET集成电路;光电导率;硅;元素半导体;功率SOI MOSFET光电检测器;纳米级导线;集成电路;光学特性;电气元件;

相似文献

外文文献
中文文献
专利

1. A Low-Power Silicon-on-Insulator Photodetector with a Nanometer-Scale Wire for Highly Integrated Circuit [J] . Hong Goo CHOI, Yeon-Shik CHOI, Young Chang JO, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第6B期

机译：具有纳米级导线的低功耗绝缘体上硅光电探测器，用于高度集成电路
2. Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits [J] . J. -P. Raskin, R. Gilon, G. Dambrine, Analog Integrated Circuits and Signal Processing . 2000,第2期

机译：用于设计低电压，低功率RF集成电路的绝缘体上MOSFET的准确表征
3. α -power law based MOSFET model for characterization of ultra deep submicron digital integrated circuit design]]> [J] . Shruti Kalra, AB Bhattacharyya AEU: Archiv fur Elektronik und Ubertragungstechnik: Electronic and Communication . 2018,第期

机译：<！[CDATA [可扩展的 < MML：MROW> α -Power定律MOSFET模型，用于超深亚微米数字集成电路设计的表征]]]>
4. A low power SOI MOSFET photodetector with a nanometer scale wire for highly integrated circuit [C] . Hong Goo Choi, Yeon-Shik Choi, Young Chang Jo, International Microprocesses and Nanotechnology Conference . 2003

机译：低功耗SOI MOSFET光电探测器，具有高度集成电路的纳米刻度线
5. Low power, highly scalable, vertical flash memory cell and MOSFET [D] . Cho, Hoon 2007

机译：低功耗，高度可扩展的垂直闪存单元和MOSFET
6. High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects [O] . Ming-Hao Kuo, Meng-Chun Lee, Horng-Chih Lin, -1

机译：用于低功率单片集成Si光学互连的高光敏性Ge-dot光电MOSFET
7. Design and Optimization of Double-Gate SOI MOSFETs for Low Voltage Low Power Circuits [O] . Liqiong Wei, Zhanping Chen, Kaushik Roy 2007

机译：低压低功率电路双栅sOI mOsFET的设计与优化

A low power SOI MOSFET photodetector with a nanometer scale wire for highly integrated circuit

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅