32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs

摘要

Two distributed amplifiers using n-type SiGe MODFETs as active devices and a coplanar waveguide topology on high resistivity silicon substrate were fabricated. Each of the amplifiers consist of six identical stages, one using a cascode transistor configuration and the other a common source transistor configuration. The distributed amplifier in cascode configuration has an increased bandwidth of 40 GHz and a gain of 4 dB with a ripple of /spl plusmn/0.4 dB. The other amplifier has a bandwidth of 32 GHz and a gain of 5.5 dB with a ripple of /spl plusmn/0.8 dB.