32 GHz and 40 GHz bandwidth distributed amplifier MMICs based on N-channel SiGe MODFETs

摘要

Two distributed ampliers using n-type SiGe MODFETs as active devices and a coplanar waveguide topology on high resistivity silicon substrate were fabricated. Each of the ampliers consists of six identical stages, one using a cascode transistor con guration and the other a common source transistor con guration. The distributed amplier in cascode con guration has an increased bandwidth of 40GHz and a gain of 4dB with a ripple of ±0.4dB. The other amplier has a bandwidth of 32GHz and a gain of 5.5dB with a ripple of ±0.8dB.