Processing characteristics of ion-chemical etching of single-crystal silicon by complex discharge plasma

摘要

Presented in this paper are the results of technological tests of the designed and manufactured discharge device. It is intended for plasma etching of materials, used in microelectronics. Reactive particles, formed in a complex (SHF and LF field) discharge, influence upon the material surface, which is the main feature of the treatment process. The experimental results demonstrated high quantitative and qualitative performances of the etching processes (in particular monocrystalline silicon etching) realized in the designed discharge device.