Examination of thin porous mono- and multilayer structures containing an underlayer of porous silicon

摘要

The paper is devoted to examination of porous silicon properties and structures obtained by molecular beam epitaxy (MBE) methods by methods of ellipsometric porosity measurement. These methods allow one to gain general porosity allocation of pores on the sizes, and also to explore adsorption and optical properties of a material. Also application of an ellipsometric porosity measuring method is described to encapsulating epifilm quality control.