A novel passivated Al(In)As/InP current blocking grating for 1.3 /spl mu/m AlGaInAs/InP complex-coupled DFB laser fabrication

摘要

For improvements of the temperature characteristics of AlGaInAs/InP MQW-SCH DFB lasers for uncooled light source application, we proposed and demonstrated experimentally a new CB grating which can be fabricated through a passivated AlInAs current blocking region. The CW operation at room temperature of the 1.3 /spl mu/m AlGaInAs/InP complex-coupled DFB laser was realized.