Effects of quantum confinement in the electronic structure of InP quantum dots

摘要

We have investigated the effect of quantum confinement on the electronic structure of InP quantum dots (QDs). Quantum confinement is predicted to reduce the indirect state separation by 300 meV in 3.5 nm InP QDs compared to bulk. Although confinement alone can not, in this case, result in a direct-to indirect transition at ambient conditions, these transitions can be observed at high pressures where the separation of the conduction band extrema is further reduced.