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Anomalously large blueshift of donor-acceptor pair transition peak in GaAs/AlGaAs coupled quantum wells with low residual impurity densities

机译:具有低残留杂质密度的GaAs / AlGaAs耦合量子阱中供体-受体对跃迁峰的异常大蓝移

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Summary form only given. We report our results on direct observation of an anomalously large blueshift as large as 12 meV in GaAs-AlGaAs QWs with low residual (undoped) impurity densities. Each photoluminescence (PL) spectrum consists of only the donor-acceptor pair (DAP) transition peak within the entire range of pump intensities. The sample was grown by molecular-beam epitaxy on a [100] semi-insulating n-type GaAs substrate.
机译:仅提供摘要表格。我们在直接观察到具有低残留(未掺杂)杂质密度的GaAs-AlGaAs QW中异常大的蓝移高达12 meV时报告了我们的结果。每个光致发光(PL)光谱仅由泵浦强度整个范围内的供体-受体对(DAP)跃迁峰组成。样品通过分子束外延在[100]半绝缘n型GaAs衬底上生长。

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