High performance wafer-bonded bottom-emitting 850 nm VCSELs on transparent substrates

摘要

Vertical-cavity surface-emitting lasers (VCSELs) are of great interest in this application because of their low cost fabrication, 2D integrable geometry, ultralow threshold current, and tight circular beam shape. We demonstrate high efficiency 850 nm bottom-emitting VCSELs on transparent undoped GaP and sapphire substrates.