Reliability improvement of 980 nm laser diodes with a new facet passivation process

摘要

Summary form only given. A newly developed facet passivation method producing highly reliable, high output power 980 nm InGaAs MQW laser diodes (LDs) is described. Even with facet cleavage in air, the devices exhibit a maximum output of 500 mW. Aging tests at 200-250 mW showed very good performance.