Mechanism of electron capture and its effect on trapped holes at oxygen-deficient centers in buried oxide

摘要

Summary form only given. Results from first-principles cluster approach quantum mechanical calculations on the electron capture mechanism by oxygen deficient center (ODC) hole traps (HTs) in SiO/sub 2/ are presented. These results suggest that upon electron capture, HTs at "unstrained" ODCs are permanently annealed out while those at highly strained ODCs form a weakly bonded electron-hole (e-h) complex which can readily emit an electron and switch back to a positive charge state. Anneal characteristics of trapped holes at ODCs in buried oxide (BOX) is an issue of fundamental importance for the reliability of silicon-on-insulator (SOI) devices.