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Compact signed-digit adder using multiple-valued logic

机译:使用多值逻辑的紧凑型有符号数字加法器

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As minimum feature sizes shrink and the number of transistors integrated in a single chip grow, interconnect complexity is one of the most important issues to be solved in future VLSI chips. The use of multivalued logic is one way to effectively solve this problem because multiple-valued signals convey more information than binary signals and thus, require a lower number of interconnecting wires to achieve similar bandwidths. This paper describes a new signed-digit adder design, which uses multiple-valued logic. The circuit is composed of resonant-tunneling diodes (RTDs) and MOS transistors. The negative differential-resistance (NDR) characteristics of RTDs help to achieve very compact circuits for implementing the multiple-valued functions found in signed-digit adders, MOS transistors are useful for implementing current-mode logic, in which addition of two or more signals is performed by simple wire interconnection. Since a redundant arithmetic is being used the selected transfer functions allow the proposed circuit to perform addition where no ripple-carry effect is present. The design was verified using circuit simulation. To demonstrate the validity of the principles being used, a modified prototype of the circuit was built. In the prototype, a standard 2-micron CMOS process was used to fabricate the MOS-based circuitry while RTDs were connected externally. Even though no fabrication processes which integrate RTDs and MOS devices are currently available, there are efforts on the development of such technologies so that the advantages of these devices can be combined.
机译:随着最小特征尺寸的缩小和集成在单个芯片中的晶体管数量的增长,互连复杂性是未来VLSI芯片要解决的最重要问题之一。多值逻辑的使用是有效解决此问题的一种方法,因为多值信号比二进制信号传递更多的信息,因此需要较少数量的互连线才能实现相似的带宽。本文介绍了一种新的带符号数字加法器设计,该设计使用了多值逻辑。该电路由谐振隧道二极管(RTD)和MOS晶体管组成。 RTD的负差分电阻(NDR)特性有助于实现非常紧凑的电路,以实现在有符号数字加法器中发现的多值功能; MOS晶体管可用于实现电流模式逻辑,其中两个或多个信号相加通过简单的导线互连即可完成。由于使用了冗余算法,因此选择的传递函数使所提出的电路能够在不存在纹波影响的情况下执行加法运算。使用电路仿真对设计进行了验证。为了证明所使用原理的有效性,构建了电路的改进原型。在原型中,标准的2微米CMOS工艺用于制造基于MOS的电路,而RTD则外部连接。即使目前尚无集成RTD和MOS器件的制造工艺,但仍在努力开发此类技术,以便可以将这些器件的优点结合起来。

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